Abstract
This chapter reviews and summarizes recent advances in laser induced formation of ultrashallow p(+)-doped junctions and silicide using single- and multiple-pulsed laser annealing. Pulsed laser annealing is a transient annealing which facilitates very fast melting, mixing and quenching. It can be used to control dopant diffusion by induced melt depth, thus an extremely high degree of dopant activation and defect annealing are achieved upon recrystallization. It is also possible to tailor the composition, structural and interface characteristics of the resultant silicide layer by varying the laser fluence and number of pulses, which makes it versatile for applications.