Abstract
In this paper, a 2.45GHz PA combined with a T/R switch has been designed and fabricated using a 0.35 mu m SiGe process. It shows a very good performance of about 20dBm output power, 18.3% power efficiency including the insertion loss of T/R switch, 1.5dB insertion loss in the receiving mode, and more than 30dB isolation. It's applicable to 2.45GHz ISM (industrial, scientific, and medical) applications.