Abstract
A fully integrated two-stages cascode ultra-wideband (UWB) low noise amplifier (LNA) for 0.5-22.4 GHz application in 0.18-μm silicon germanium (SiGe) technology is presented in this paper. The pole staggering technology is adopted to expand the operation bandwidth with multiple technologies of collectively mitigating the gain roll-off of LNA. The proposed LNA achieves a simulated gain of 26.5 dB with less than 0.5 dB in-band fluctuation from S-band to Ku-band. The noise figure (NF) varies from 1.5 dB to 2.7 dB within the 3-dB bandwidth. Moreover, the chip occupies a silicon area of 0.5 mm 2 including all pads.