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A 220 GHz 5-Bit Phase Shifter with Low Phase-Error in 0.13μm BiCMOS Technology
Conference proceeding

A 220 GHz 5-Bit Phase Shifter with Low Phase-Error in 0.13μm BiCMOS Technology

Huiying Wu, Jinxin Li, Fanyi Meng and IEEE
IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (Online)
IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications
01/01/2022
DOI: https://doi.org/10.1109/IMWS-AMP54652.2022.10106906

Abstract

Engineering Engineering, Electrical & Electronic Materials Science Materials Science, Multidisciplinary Science & Technology Technology
This paper presents a 210-230 GHz vector-sum phase shifter using 0.13 mu m SiGe BiCMOS technology. A differential coupler is exploited to generate the I/Q quadrature signals with low phase and amplitude imbalances. The amplitude weighting circuits are realized by two current control variable gain amplifiers with phase shift redundancies. The simulation results show that the phase shifter achieves 5-bit phase resolution with 360 degrees phase tuning range, and a peak gain of -11 dB under 27.4 mW power consumption. From 210 to 230 GHz, the simulated root-mean-square(rms) phase and gain errors are 1.932.22 degrees and 1.05-1.1 dB, respectively. The core chip area is 0.21x0.22 mm(2).

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