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A 2.4 GHz High Efficiency Wideband Power Amplifier in 28-nm CMOS Process
Conference proceeding

A 2.4 GHz High Efficiency Wideband Power Amplifier in 28-nm CMOS Process

Yu Hongshi, Bharatha Kumar Thangarasu, Kiat Seng Yeo and IEEE
International Conference on Integrated Circuit Design and Technology : proceedings, pp.1-3
25/09/2024
DOI: https://doi.org/10.1109/ICICDT63592.2024.10717745

Abstract

Cascode CMOS process Gain Linearity Metals power added efficiency (P AE) power amplifier (P A) Power amplifiers Semiconductor device measurement Transistors Ultra wideband technology Wideband
This article presents a high efficiency power amplifier (P A) based on TSMC 28 nm complementary metal oxide semiconductor (CMOS) process at 2.4 GHz. The transistors in the proposed amplifier are biased at different states to enhance both the linearity and power added efficiency (P AE). The P A's saturation output is 25.6 dBm and it gets a maximum output of23.7 dBm at output 1 dB compression point (OP1dB). The PAE achieved 41 % at the OP1dB point.

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