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A 400-GHz Octagonal-Slotted Dielectric Resonator Antenna with 10 dBi Gain in 0.13-μm CMOS SOI
Conference proceeding

A 400-GHz Octagonal-Slotted Dielectric Resonator Antenna with 10 dBi Gain in 0.13-μm CMOS SOI

He ji, Fanyi Meng, Kaixue Ma and Shouxian Mou
2020 IEEE Asia-Pacific Microwave Conference (APMC), pp.691-693
08/12/2020
DOI: https://doi.org/10.1109/APMC47863.2020.9331587

Abstract

CMOS SOI CMOS technology Dielectric resonator antennas Dietectric resonator antenna (DRA) Gain octagonat-stotted Slot antennas Substrates System-on-chip THz Transceivers
This paper presents the design of a 400-GHz integrated dielectric resonator antenna (DRA) in 0.13-\mum CMOS SOI technology. A substrate integrated waveguide (SIW) cavity type on-chip antenna is loaded with complementary open-loop octagonal-shape slot resonator to enhance the gain and radiation efficiency of the antenna. A low dielectric constant Teflon substrate and a high permittivity ceramic substrate are stacked on the antenna to further improve the directivity and radiation efficiency. The proposed antenna shows a peak gain of 10 dBi and radiation efficiency 55% at 400 GHz in full-wave simulation. The overall antenna has a compact size of 0.88\times 0.88mm 2 .

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