Abstract
We report in this paper a BiCMOS realization of the well-known noise canceling CMOS low noise amplifier first proposed in [1]. The ingenious design proposed in [1] features wonderful merits such as ultra-low noise, wideband and very good linearity. In order to achieve the noise cancelation point, a large amount of biasing current is needed in CMOS implementation. We design BiCMOS implementation of this famous noise canceling topology, which achieves significant biasing current reduction. Simulated in Tower Jazz 0.18 mu m SiGe technology, the designed wideband LNA operates up to 5.2GHz with 17.5dB gain and dissipates about 10mA current from a single 1.8V supply. The simulated IIP3 is +5dBm with a noise figure of less than 2.5dB when matched to 50 Omega and the chip layout area is less than 0.3mm(2) excluding pads.