Abstract
This paper proposes a compact 5.15-5.85 GHz low noise amplifier (LNA) based on substrate integrated suspended line (SISL) platform, which has a 0.8 dB low noise figure (NF) at 5.5 GHz. Pseudomorphic high electron mobility transistor (pHEMT) ATF-36163 from Avago Technologies is adopted to realize the LNA prototype. Unlike the conventional microstrip line, the self- packaged structure with air cavities reduces the circuit size and fabrication cost. Meanwhile, it cuts down dielectric loss as well as field dispersion considerably. Thus noise from passive matching network is reduced. Taking the advantage of SISL, the LNA shows the merits of low noise, self-packaging, compact size and low cost.