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A Cross-Coupled Ka-Band GaAs-pHEMT Based VCO
Conference proceeding

A Cross-Coupled Ka-Band GaAs-pHEMT Based VCO

Kai Men, Lee Bai Song Samuel, Bharatha Kumar Thangarasu, Qiong Zou and Kiat Seng Yeo
PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON COMPUTER NETWORKS AND COMMUNICATION TECHNOLOGY (CNCT 2016), Vol.54, pp.231-236
ACSR-Advances in Comptuer Science Research
01/01/2016

Abstract

Computer Science Computer Science, Theory & Methods Engineering Engineering, Electrical & Electronic Science & Technology Technology
A cross-coupled GaAs pseudomorphic high electron mobility transistor (pHEMT) based Ka-band voltage-controlled oscillator (VCO) is reported in this work, by using commercial OMMIC 0.13 mu m depletion-mode power pHEMT (D01PH) process. The simulation of the proposed VCO demonstrates an operating frequency range from 28.54 GHz to 32.44 GHz with the tuning range of 12.8%, an output power from 15.2 dBm to 15.9 dBm, total dc power consumption of 124 mW and power efficiency from 27.2% to 31.9%. The simulated phase noise is from - 105.7 dBc/Hz to -100.4 dBc/Hz at 1 MHz offset frequency and the figure-of-merit (FoM) is -207.4 dBc/Hz at the center frequency of 30.3 GHz.

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