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A G-band High-Gain Power Amplifier with Positive Voltage-Feedback in 55-nm CMOS Technology
Conference proceeding

A G-band High-Gain Power Amplifier with Positive Voltage-Feedback in 55-nm CMOS Technology

Xin Zhang, Fanyi Meng, Haipeng Fu, Kaixue Ma, Jianguo Ma and IEEE
UK, Europe, China Millimetre Waves and THZ Technology Workshop (Online), pp.1-3
29/08/2020
DOI: https://doi.org/10.1109/UCMMT49983.2020.9296080

Abstract

Coplanar waveguides Couplings Gain Power amplifiers Silicon germanium Topology Wireless communication
This paper presents a five-stage single-ended G-band power amplifier (PA) using 55-nm CMOS process. Each stage of the PA adopts common source topology with positive voltage-feedback coupled through adjacent coplanar waveguide (CPW) stubs. Full-wave simulation shows a saturated output power of 9 dBm, output P 1dB of 4.3 dBm, a small signal gain of 24 dB, and a peak PAE of 10%, with supply voltage of 1.2V. The 3-dB bandwidth of this PA is 18 GHz from 163 to 181 GHz.

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