Abstract
A 20GHz differential 4-stacked power amplifier fabricated on 0.18μm SiGe technology is presented. Uniquely, 2 capacitive compensation techniques are introduced at common base stages and successfully boosting power gain by 2.56dB/stage. Inter-stage matching inductors are adopted and input biasing is achieved by emitter follower for reliability concern. It demonstrates favorable gain performance of >20dB against other stacking schemes while showing competitive saturated power of ≈22dBm with peak PAE of 26%.