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A New Unified Model for Channel Thermal Noise of Deep Sub-micron RFCMOSC
Conference proceeding

A New Unified Model for Channel Thermal Noise of Deep Sub-micron RFCMOSC

S. N. Ong, K. W. J. Chew, K. S. Yeo, L. H. K. Chan, X. S. Loo, C. C. Boon, M. A. Do and IEEE
2009 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY: SYNERGY OF RF AND IC TECHNOLOGIES, PROCEEDINGS, pp.280-283
01/01/2009
DOI: https://doi.org/10.1109/RFIT.2009.5383701

Abstract

Engineering Engineering, Electrical & Electronic Science & Technology Technology Telecommunications
A new unified model for circuit simulation is presented to predict the high frequency channel thermal noise of deep sub-micron MOSFETs in strong inversion region. Based on the new channel thermal noise model, the simulated channel thermal noise spectral densities of the devices fabricated in a 0.13 mu m RFCMOS technology process are compared to the channel noise directly extracted from RF noise measurements.

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