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A W-band Power Amplifier with 15-dBm Psat and 14% PAE in 0.13-mu m SiGe HBT Technology
Conference proceeding

A W-band Power Amplifier with 15-dBm Psat and 14% PAE in 0.13-mu m SiGe HBT Technology

Lisheng Chen, Lang Chen, Zeyu Ge, Fanyi Meng, Xi Zhu and IEEE
2021 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS 2021)
01/01/2021

Abstract

Engineering Engineering, Electrical & Electronic Science & Technology Technology Telecommunications
In this work, the design of a wideband millimetre-wave (mm-Wave) power amplifier (PA) is presented. To ensure the designed PA has not only a sufficient output power with good power-added efficiency (PAE) but also superior input and output impedance matching, a balanced amplifier (BA) architecture is used. A prototype PA is designed in a 0.13-mu m SiGe HBT technology. With a 1.6-V power supply, the PA can deliver more than 15 dBm saturated output power between 85-100 GHz that is equivalent to more than 16% fractional bandwidth. The peak PAE is better than 14.7% within this frequency range. The overall physical dimension of the designed PA is very compact. Including all pads, it is only 0.6 mm 0.9 mm.

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