Abstract
This paper proposes a wideband low noise amplifier adopting feedback networks to improve gain and noise performance. In the proposed work, the dual-path of complementary NMOS and PMOS configuration boosts the gain of common-gate stage, which reduces the power consumption and contributes to wideband input impedance matching simultaneously. Fabricated in SMIC 55nm RF-CMOS technology, the simulated results indicate that the S 21 is 12.8 dB, noise figure is about 3 dB from 0.6 to 8 GHz, and IIP3 is -8 dBm at 5.175GHz. Its dissipative current is 12mA with 1.2 V supply and the whole area is 0.625 mm 2 .