Abstract
A novel 1-V full-swing BiCMOS logic circuit. using a positive feedback base-boost technique for highspeed applications is described. The simulation results have shown that the new circuit outperforms the best non-complementary BiCMOS circuits reported so far in terms of speed, power consumption and chip area. Based on the 1 V/0.35 mu m technology the proposed circuit offers 49% delay reduction with negligible power dissipation over the CMOS at a load of 1 pF. The crossover capacitance of the proposed circuit is as low as 0.1 pF, and the experimental results have confirmed its circuit operation. Its gate delay per stage was measured to be 1.58 ms at 2 V/ 0.8 mu m technology.