Above room temperature ferromagnetism in Mn-ion implanted Si0.75Ge0.25

V. Ko; K. L. Teo; T. Liew; T. C. Chong

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Above room temperature ferromagnetism in Mn-ion implanted Si0.75Ge0.25

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Above room temperature ferromagnetism in Mn-ion implanted Si0.75Ge0.25

V. Ko, K. L. Teo, T. Liew and T. C. Chong

PHYSICS OF SEMICONDUCTORS, PTS A AND B, Vol.893, p.1229

AIP Conference Proceedings

01/01/2007

Abstract

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Ferromagnetic behaviour above room temperature has been observed in Mn-ions implanted Si0.75Ge0.25. The 900 degrees C annealed sample with Mn dosage of 2x10(16) cm(-2) exhibit saturation magnetization, saturation field and coercive field of similar to 9 emu/cm(3) and similar to 1500 Oe and similar to 60 Oe respectively at 300K.

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Title: Above room temperature ferromagnetism in Mn-ion implanted Si0.75Ge0.25
Creators - without role: V. Ko - Supreme Council Of Health
K. L. Teo - Natl Univ Spore, Electr & Comp Engn Dept, Spokane, WA USA
T. Liew - Natl Univ Spore, Electr & Comp Engn Dept, Spokane, WA USA
T. C. Chong - Natl Univ Spore, Electr & Comp Engn Dept, Spokane, WA USA
Contributors - without role: W Jantsch
F Schaffler
Publication Details: PHYSICS OF SEMICONDUCTORS, PTS A AND B, Vol.893, p.1229
Series: AIP Conference Proceedings
Publisher: Amer Inst Physics
Number of pages: 2
Grant note: 022 105 0053 / Singapore Agency for Science, Technology and Research (A* STAR); Agency for Science Technology & Research (A*STAR)
Identifiers: 9911286809846
Academic Unit: Temasek Lab
Language: English
Resource Type: Conference proceeding

Above room temperature ferromagnetism in Mn-ion implanted Si0.75Ge0.25

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