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An Integrated SiGe Dual-band Low Noise Amplifier for Bluetooth, HiperLAN and Wireless LAN Applications
Conference proceeding

An Integrated SiGe Dual-band Low Noise Amplifier for Bluetooth, HiperLAN and Wireless LAN Applications

Mou Shouxian, Ma Jianguo, Yeo Kiat Seng, Do Manh Anh and Kiat Seng Yeo
33rd European Microwave Conference 2003 : conference proceedings : [7-9th October, 2003, ICM, Munich, Germany, pp.5-8
10/2003
DOI: https://doi.org/10.1109/EUMA.2003.340812

Abstract

BiCMOS integrated circuits Bluetooth Costs Dual band Frequency Gallium arsenide Germanium silicon alloys Low-noise amplifiers Silicon germanium Wireless LAN
A bandpass low noise amplifier (LNA), which can simultaneously operate at two different frequency bands - 2.35GHz-2.6GHz and 5GHz-6GHz, is presented in this paper. The proposed dual-band LNA can be used for the Bluetooth, HiperLAN and Wireless LAN (IEEE 802.11a) communication applications, and is designed based on IBM 0.25μm SiGe BiCMOS technology, which has better performance comparing with silicon technology, while lower cost and better integration feasibility comparing with GaAs technology.

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