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An experimentally-based DC model for the Bi-MOS structure and its adaptation to a circuit simulation environment
Conference proceeding

An experimentally-based DC model for the Bi-MOS structure and its adaptation to a circuit simulation environment

S.S. Rofail, K.S. Yeo, K.W. Chew, X. Zhou and T.W. Tang
Conference Proceedings. IEEE Canadian Conference on Electrical and Computer Engineering (Cat. No.98TH8341), Vol.1, pp.37-40 vol.1
1998
DOI: https://doi.org/10.1109/CCECE.1998.682544

Abstract

Analytical models Circuit simulation Energy states Equations MOS devices MOSFET circuits Predictive models Space charge Space technology SPICE
This paper presents an experimentally-based model that can accurately describe the hybrid-mode operation of deep submicron LDD p-MOSFETs in a circuit environment. Unified equations for the MOS, bipolar, and space charge currents of the Bi-MOS structure were derived and later adapted to meet the circuit simulation requirements.

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