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An integrated SiGe RF bandpass low noise amplifier for multi-band wireless communication applications
Conference proceeding

An integrated SiGe RF bandpass low noise amplifier for multi-band wireless communication applications

Mou Shouxian, Ma Jianguo, Yeo Kiat Seng, Do Manh Anh and Kiat Seng Yeo
APCC2003 : the 9th Asia-Pacific Conference on Communications ; in conjunction with 6th Malaysia International Conference on Communications (MICC03) : 21-24 September 2003, City Bayview Hotel, Penang, Malaysia, Vol.1, pp.420-424 Vol.1
2003
DOI: https://doi.org/10.1109/APCC.2003.1274388

Abstract

BiCMOS integrated circuits Communication standards Dual band Germanium silicon alloys Low-noise amplifiers Personal communication networks Radio frequency Radiofrequency amplifiers Silicon germanium Wireless communication
A dual-band low noise amplifier (LNA) based on IBM SiGe 0.25 /spl mu/m BiCMOS technology is presented in this paper. It is able to work simultaneously at two different frequency bands: 935 MHz-960 MHz and 1.8 GHz-2.5 GHz, which cover the communication standards of GSM900/1800, DECT, PHS, PCS, 3G mobile and the Bluetooth as well as IEEE802.11b/g (WI-FI/WI-FI5). Comparing with GaAs devices, the proposed LNA has lower cost and better integration feasibility.

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