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Analysis of dopant metrology using scanning capacitance microscopy and transmission electron microscopy as complementary techniques
Conference proceeding

Analysis of dopant metrology using scanning capacitance microscopy and transmission electron microscopy as complementary techniques

M. Natarajan, T.T. Sheng, K.L. Pey, Y.P. Lee and M.K. Radhakrishnan
Proceedings of the 1997 6th International Symposium on the Physical & Failure Analysis of Integrated Circuits [IPFA '97 : 21-25 July, 1997, Raffles City Convention Centre, Singapore, Vol.6, pp.86-91
1997
DOI: https://doi.org/10.1109/IPFA.1997.638126

Abstract

Atomic force microscopy Electrical capacitance tomography Integrated circuit measurements Metrology Random access memory Scanning electron microscopy Scanning probe microscopy Silicon Transmission electron microscopy Voltage
The results of physical analysis carried out on Dynamic Random Access Memory (DRAM) devices, using Scanning Capacitance Microscopy (SCM) and Transmission Electron Microscopy (TEM) to investigate specifically the dopant profile at the sidewall of the trench capacitor structures is presented here. The SCM results provide information on the dopant metrology on samples, whereas the TEM analysis, which includes junction delineation, further supports the finding of dopant distribution as well as other physical phenomena.

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