Analytic model for the post-breakdown current in HfO2/TaN/TiN gate stacks

Conference proceeding

E. Miranda, K. L. Pey, R. Ranjan and C. H. Tung

Proceedings of the 14th International Symposium on the Physical & Failure Analysis of Integrated Circuits : IPFA 2007, pp.292-295

01/01/2007

Abstract

Engineering

Engineering, Electrical & Electronic

Materials Science

Materials Science, Multidisciplinary

Science & Technology

Technology

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Title: Analytic model for the post-breakdown current in HfO2/TaN/TiN gate stacks
Creators - without role: E. Miranda - Universitat Autònoma de Barcelona
K. L. Pey - Nanyang Technological University
R. Ranjan - Nanyang Technological University
C. H. Tung - Institute of Microelectronics
Contributors - without role: S Mahapatra
M K Radhakrishnan
Publication Details: Proceedings of the 14th International Symposium on the Physical & Failure Analysis of Integrated Circuits : IPFA 2007, pp.292-295
Publisher: IEEE
Number of pages: 2
Grant note: Nanyang Technological University, Singapore; Nanyang Technological University TEC2006-13731-C02-01 / Ministerio de Ciencia y Tecnologia (Spain); Spanish Government; Ministry of Science & Innovation, Spain (MICINN)
Identifiers: 9914220309846
Academic Unit: Engineering Product Development (EPD); Temasek Lab
Language: English
Resource Type: Conference proceeding