Abstract
Ultra-silicon-rich nitride devices possess large Kerr nonlinearity and absence of two-photon absorption at telecommunications wavelengths. We report recent results in high gain amplifiers and soliton-effects in USRN devices. On-chip optical parametric amplifiers with 42.5dB gain, and slow-light enhanced optical parametric amplifiers with 333dB/cm gain are demonstrated. Nonlinear USRN Bragg gratings are designed and demonstrated to possess three orders of magnitude larger group velocity dispersion compared to photonic waveguides. Time-resolved measurements reveal high-order Bragg soliton dynamics as well as observation of compression and fission triggered by large third-order dispersion. We further demonstrate close to ten-fold soliton-effect temporal compression in USRN waveguides.