CMOS compatible USRN:Si7N3 for supercontinuum generation, parametric amplification and four-wave mixing

T. Wang; K. J. A. Ooi; Doris K. T. Ng; A. K. L. Chee; Dawn T. H. Tan; IEEE; Tse Hui Dawn Tan

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CMOS compatible USRN:Si7N3 for supercontinuum generation, parametric amplification and four-wave mixing

T. Wang, K. J. A. Ooi, Doris K. T. Ng, A. K. L. Chee, Dawn T. H. Tan, IEEE and Tse Hui Dawn Tan

IEEE International Conference on Group IV Photonics, pp.103-104

IEEE International Conference on Group IV Photonics

01/01/2017

Abstract

Engineering

Engineering, Electrical & Electronic

Optics

Physical Sciences

Physics

Physics, Applied

Science & Technology

Technology

We experimentally demonstrate a CMOS compatible optical parametric amplifier based on Si7N3 waveguides which are compositionally tailored that the 1550nm wavelength resides within the multi-photon regime, while possessing large nonlinear parameter of 550 W-1/m, 500 times larger than that in Si3N4.

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Title: CMOS compatible USRN:Si7N3 for supercontinuum generation, parametric amplification and four-wave mixing
Creators - without role: T. Wang - Singapore Univ Technol & Design, MIT Int Design Ctr, Singapore, Singapore
K. J. A. Ooi - Singapore Univ Technol & Design, MIT Int Design Ctr, Singapore, Singapore
Doris K. T. Ng - Data Storage Institute
A. K. L. Chee - MIT, 77 Massachusetts Ave, Cambridge, MA 02139 USA
Dawn T. H. Tan - Singapore Univ Technol & Design, MIT Int Design Ctr, Singapore, Singapore
IEEE
Tse Hui Dawn Tan - EPD Pillar
Publication Details: IEEE International Conference on Group IV Photonics, pp.103-104
Series: IEEE International Conference on Group IV Photonics
Publisher: IEEE
Number of pages: 2
Identifiers: 9911489509846
Academic Unit: EPD Pillar
Language: English
Resource Type: Conference proceeding

CMOS compatible USRN:Si7N3 for supercontinuum generation, parametric amplification and four-wave mixing

Abstract

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