Contrasting failure characteristics of different levels of Cu dual-damascene metallization

Conference proceeding

C L Gan, F Wei, C V Thompson, K L Pey, W K Choi, S P Hau-Riege and B Yu

2002 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Vol.2002-(9TH), pp.124-128

01/01/2002

Abstract

Engineering

Engineering, Electrical & Electronic

Instruments & Instrumentation

Physical Sciences

Physics

Physics, Condensed Matter

Science & Technology

Technology

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Title: Contrasting failure characteristics of different levels of Cu dual-damascene metallization
Creators - without role: C L Gan - Massachusetts Institute of Technology
F Wei - Massachusetts Institute of Technology
C V Thompson - Massachusetts Institute of Technology
K L Pey - Nanyang Technological University
W K Choi - National University of Singapore
S P Hau-Riege - Lawrence Livermore National Laboratory
B Yu - Institute of Microelectronics
Contributors - without role: J Thong
W Tan
W K Chim
K C Lee
Publication Details: 2002 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Vol.2002-(9TH), pp.124-128
Publisher: IEEE
Number of pages: 5
Identifiers: 9914330009846
Academic Unit: Engineering Product Development (EPD); Temasek Lab
Language: English
Resource Type: Conference proceeding