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Correlation of film thickness and deposition temperature with PAI and the scalability of Ti-salicide technology to sub-0.18 /spl mu/m regime
Conference proceeding

Correlation of film thickness and deposition temperature with PAI and the scalability of Ti-salicide technology to sub-0.18 /spl mu/m regime

C.S. Ho, R.P.G. Karunasiri, S.J. Chua, K.L. Pey, S.Y. Siah, K.H. Lee and L.H. Chan
Proceedings of the IEEE 1998 International Interconnect Technology Conference, Hyatt Regency Hotel, San Francisco, CA, June 1-3,1998, pp.193-195
1998
DOI: https://doi.org/10.1109/IITC.1998.704789

Abstract

Annealing Argon Atherosclerosis Collimators Electrical resistance measurement Implants Manufacturing processes Scalability Temperature Tin
We present the first working solutions for a sub-0.25 /spl mu/m Ti-salicide process incorporating /sup 14/Si or Ar/sup +/ PAI (preamorphization implant). Various film stack thicknesses, collimated deposition temperatures, and key PAI process parameters are studied and evaluated. The use of high-temperature PVD with PAI is emphasized to yield devices with low gate sheet resistance and tight leakage distributions.

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