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Critical gate voltage and digital breakdown: Extending post-breakdown reliability margin in ultrathin gate dielectric with thickness ≪ 1.6 nm
Conference proceeding

Critical gate voltage and digital breakdown: Extending post-breakdown reliability margin in ultrathin gate dielectric with thickness ≪ 1.6 nm

V.L. Lo, K.L. Pey, R. Ranjan, C.H. Tung, J.R. Shih, K. Wu and IEEE
2009 IEEE International Reliability Physics Symposium, pp.696-699
04/2009
DOI: https://doi.org/10.1109/IRPS.2009.5173332

Abstract

Breakdown voltage Degradation Dielectric breakdown Electric breakdown Gate leakage Gate oxide breakdown Leakage current Low voltage Manufacturing MOSFET circuits progressive breakdown Stress
The saturation of a critical gate voltage at 2-2.4 V for SiON with thickness < 1.6 nm (EOT < 1.4 nm) extends the role of digital breakdown (BD) in prolonging progressive BD at nominal voltages. As a result, the post-BD gate leakage degradation rate, which is extrapolated from a high voltage using the conventional approach, is highly overestimated, warranting one to revise the post-BD reliability assessment.

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