Abstract
Integration of copper (Cu) and low-k dielectrics has posed significant challenges for device reliability and packaging. For faster and successful semiconductor product introduction, early implementation of simulation model for physics and mechanical studies, and the subsequent design for manufacturability (DFM) are important considerations for device reliability and packaging communities. In this paper, several structural designs and finite element analysis (FEA) simulation models were employed to illustrate the importance of DFM in backend reliability and packaging. Also, its extendibility to future nanoscale technologies employing porous ultra low-k Cu interconnects was discussed.