Abstract
This paper presents a fully integrated switchable transistor CMOS LNA for 2.1 GHz and 2.4 GHz applications. The LNA is designed using 0.18 gm 1P6M CMOS technology. It matches the input in two frequency bands easily without using extra on-chip spiral inductor, compared with [1], [2]. The post layout simulation exhibits input matching with S-11 of -12.9 dB at 2.1 GHz and -24.1 dB at 2.4 GHz respectively. Moreover, it achieves power gain of 14 dB and 14.6 dB, noise figure 3.6 dB and 3.7 dB, and IIP3 -1.3 dBm and 2.6 dBm respectively.