- Title
- Dielectric-breakdown-induced epitaxy : A universal breakdown defect in ultrathin gate dielectrics
- Creators - without role
- R Ranjan - Nanyang Technological UniversityK. L Pey - Nanyang Technological UniversityT. A. L Selvarajoo - Nanyang Technological UniversityL. J Tang - Nanyang Technological UniversityC. H Tung - Institute of MicroelectronicsW. H Lin - Chartered Semiconductor Manufacturing Ltd, 60, Woodlands Industrial Park D, Street 2, Singapore 738406, Singapore
- Publication Details
- Proceedings of the 11th International Symposium on the Physical & Failure Analysis of Integrated Circuits : IPFA 2004 : [July 5-8, 2004, Taiwan, pp.53-56
- Conference
- Proceedings of the 11th International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA 2004)
- Publisher
- IEEE
- Number of pages
- 4
- Identifiers
- 9914227009846
- Academic Unit
- Engineering Product Development (EPD); Temasek Lab
- Language
- English
- Resource Type
- Conference proceeding
Conference proceeding
Dielectric-breakdown-induced epitaxy : A universal breakdown defect in ultrathin gate dielectrics
Proceedings of the 11th International Symposium on the Physical & Failure Analysis of Integrated Circuits : IPFA 2004 : [July 5-8, 2004, Taiwan, pp.53-56
Proceedings of the 11th International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA 2004)
2004
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