Edge Contact Lateral Phase Change RAM with SuperLattice-like Phase Change Medium

Conference proceeding

H. X. Yang, L. P. Shi, R. Zhao, H. K. Lee, J. M. Li, K. G. Lim, T. C. Chong and IEEE

2009 IEEE INTERNATIONAL MEMORY WORKSHOP, pp.68-69

01/01/2009

Abstract

Computer Science

Computer Science, Hardware & Architecture

Engineering

Engineering, Electrical & Electronic

Science & Technology

Technology

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Title: Edge Contact Lateral Phase Change RAM with SuperLattice-like Phase Change Medium
Creators - without role: H. X. Yang - Data Storage Institute
L. P. Shi - Data Storage Institute
R. Zhao - Data Storage Institute
H. K. Lee - Data Storage Institute
J. M. Li - Data Storage Institute
K. G. Lim - Data Storage Institute
T. C. Chong - Data Storage Institute
IEEE
Publication Details: 2009 IEEE INTERNATIONAL MEMORY WORKSHOP, pp.68-69
Publisher: IEEE
Number of pages: 2
Identifiers: 9911296409846
Academic Unit: Temasek Lab
Language: English
Resource Type: Conference proceeding