- Title
- Effect of argon or nitrogen pre-amorphized implant on SALICIDE formation for deep sub-micron CMOS technology
- Creators - without role
- C. S HO - National University of SingaporeK. L Pey - R&D Department, Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406, SingaporeH Wong - R&D Department, Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406, SingaporeR. P. G Karunasiri - National University of SingaporeS. J Chua - National University of SingaporeK. H Lee - R&D Department, Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406, SingaporeY Tang - Implant Module Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406, SingaporeS. M Wong - Implant Module Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406, SingaporeL. H Chan - R&D Department, Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406, Singapore
- Publication Details
- Microlithographic techniques in IC fabrication : 25-26 June, 1997, Singapore, Vol.3183, pp.243-254
- Conference
- Microlithographic techniques in IC fabrication (Singapore, 25-26 June 1997)
- Publisher
- SPIE
- Number of pages
- 12
- Identifiers
- 9914324009846
- Academic Unit
- Engineering Product Development (EPD); Temasek Lab
- Language
- English
- Resource Type
- Conference proceeding
Conference proceeding
Effect of argon or nitrogen pre-amorphized implant on SALICIDE formation for deep sub-micron CMOS technology
Microlithographic techniques in IC fabrication : 25-26 June, 1997, Singapore, Vol.3183, pp.243-254
Microlithographic techniques in IC fabrication (Singapore, 25-26 June 1997)
1997
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