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Effect of transmission line pulsing of interconnects investigated using combined low-frequency noise and resistance measurements
Conference proceeding

Effect of transmission line pulsing of interconnects investigated using combined low-frequency noise and resistance measurements

L.W. Chu, W.K. Chim, K.L. Pey and A. See
2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits, (8TH), pp.97-102
2001
DOI: https://doi.org/10.1109/IPFA.2001.941463

Abstract

1f noise Artificial intelligence Electrical resistance measurement Electrostatic discharge Integrated circuit interconnections Low-frequency noise Noise measurement Semiconductor device noise Stress Transmission lines
A novel technique of combining 1/f noise and resistance measurements for characterising electrostatic discharge (ESD) induced voiding damage in aluminium interconnects is reported. The ESD stress was performed using the transmission line pulsing (TLP) technique. Samples of different line widths, with and without an overlying passivation, were studied.

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