Abstract
Conference Title: ESSDERC 2015 - 45th European Solid-State Device Research Conference Conference Start Date: 2015, Sept. 14 Conference End Date: 2015, Sept. 18 Conference Location: Graz, Austria In this paper, the impact of metallic lanthanum (La) deposited by Radio-Frequency PVD on effective work function (WF eff ) of HfON-based NFET devices in a sacrificial metal gate-first approach is evaluated for the first time. Engineering of WF eff towards N+ without leakage degradation is demonstrated by tuning both the pedestal TiN thickness and the as-deposited metallic La dose. WF eff shift is related to a La-induced interfacial dipole (5), whose value has been correlated to the effective La dose into HfON/SiON stack after diffusion annealing, which has been accurately measured through a spectroscopic method based on La X-Ray Fluorescence (XRF).