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Effects of polysilicon shield on spiral inductors for silicon-based RF IC's
Conference proceeding

Effects of polysilicon shield on spiral inductors for silicon-based RF IC's

C.B. Sia, K.S. Yeo, W.L. Goh, T.N. Swe, C.Y. Ng, K.W. Chew, W.B. Loh, S. Chu, L. Chan and IEEE
2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517), pp.158-161
2001

Abstract

Active inductors Costs Energy dissipation Mobile communication Q factor Radio frequency Radiofrequency integrated circuits Silicon Spirals Substrates
Increasing demands for more affordable personal mobile communication equipment have motivated research and development of low cost, high performance silicon-based on-chip inductors. Current silicon technology uses a conductive substrate, which causes unwanted energy dissipation. Inserting a patterned polysilicon shield beneath inductors can help reduce this substrate loss. Effects of the polysilicon ground shield on inductor performance have been investigated. An inductor utilizing a new high resistivity polysilicon floating shield is shown in this paper to have improved inductive characteristics.

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