Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack

Conference proceeding

Peer reviewed

P. S Lee, D Mangelinck, K. L Pey, J Ding, D. Z Chi, T Osipowicz, J. Y Dai and A See

Microelectronic engineering, Vol.60(1-2), pp.171-181

Proceedings of the fifth european workshop on materials for advanced metallization (MAM 2001), Sigtuna, Sweden, March 5-7, 2001

2002

Abstract

Applied sciences

Electronics

Exact sciences and technology

Materials

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Transistors

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Title: Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack
Creators - without role: P. S Lee - National University of Singapore
D Mangelinck - Centre National de la Recherche Scientifique
K. L Pey - Duke-NUS Medical School
J Ding - National University of Singapore
D. Z Chi - Institute of Materials Research and Engineering
T Osipowicz - National University of Singapore
J. Y Dai - Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore, 738406, Singapore
A See - Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore, 738406, Singapore
Publication Details: Microelectronic engineering, Vol.60(1-2), pp.171-181
Conference: Proceedings of the fifth european workshop on materials for advanced metallization (MAM 2001), Sigtuna, Sweden, March 5-7, 2001
Publisher: Elsevier Science
Number of pages: 11
Identifiers: 9914325809846
Academic Unit: Engineering Product Development (EPD); Temasek Lab
Language: English
Resource Type: Conference proceeding