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Extremely high-Q stacked transformer-type inductors for RF applications
Conference proceeding

Extremely high-Q stacked transformer-type inductors for RF applications

S.F. Lim, K.S. Yeo, J.G. Ma, M.A. Do, K.W. Chew, S.-F. Chu and IEEE
2003 International Symposium on VLSI Technology, Systems and Applications. Proceedings of Technical Papers. (IEEE Cat. No.03TH8672), Vol.2003-, pp.147-150
2003
DOI: https://doi.org/10.1109/VTSA.2003.1252574

Abstract

Coils Couplings Inductance Inductors Phase transformers Q factor Radio frequency Radiofrequency amplifiers Spirals Tunable circuits and devices
A stacked tunable inductor with extremely high quality factor (Q) (>2000) is presented. Compared with transformer-type inductors with interleaved configuration, full-wave electromagnetic (EM) simulation results demonstrate that the stacked structure offers greater advantages in terms of area efficiency, achievable inductance value, and peak Q frequency. Besides, detailed discussions on power levels at the inputs of driving coils are presented to illustrate the effects of parasitic capacitance between the primary coil and driving coil.

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