Abstract
This work reports the demonstration of using pulsed laser annealing (LA) technique to realize high dopant activation in GaAs. The results show that the defects induced by ion-implantation can be eliminated by pulsed LA. Good crystalline structure is preserved after the laser annealing from the high resolution TEM micrographs. High dopant activation and excellent rectifying characteristic is obtained in the diode activated by high laser fluence.