Geometry dependence of gate oxide breakdown evolution

Y Sun; K. L Pey; C. H Tung; S Lombardo; F Palumbo; L. J Tang; M. K Radhakrishnan

doi:10.1109/IPFA.2004.1345539

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Conference proceeding

Geometry dependence of gate oxide breakdown evolution

Y Sun, K. L Pey, C. H Tung, S Lombardo, F Palumbo, L. J Tang and M. K Radhakrishnan

Proceedings of the 11th International Symposium on the Physical & Failure Analysis of Integrated Circuits : IPFA 2004 : [July 5-8, 2004, Taiwan, (CONF 11), pp.57-60

Proceedings of the 11th International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA 2004)

2004

DOI: https://doi.org/10.1109/IPFA.2004.1345539

Abstract

Applied sciences

Electronics

Exact sciences and technology

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Transistors

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Title: Geometry dependence of gate oxide breakdown evolution
Creators - without role: Y Sun - Nanyang Technological University
K. L Pey - Nanyang Technological University
C. H Tung - Institute of Microelectronics
S Lombardo - Istituto Nazionale di Fisica Nucleare, Sezione di Catania
F Palumbo - Istituto Nazionale di Fisica Nucleare, Sezione di Catania
L. J Tang - Nanyang Technological University
M. K Radhakrishnan - National University of Singapore
Publication Details: Proceedings of the 11th International Symposium on the Physical & Failure Analysis of Integrated Circuits : IPFA 2004 : [July 5-8, 2004, Taiwan, (CONF 11), pp.57-60
Conference: Proceedings of the 11th International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA 2004)
Publisher: IEEE
Number of pages: 4
Identifiers: 9914327709846
Academic Unit: Engineering Product Development (EPD); Temasek Lab
Language: English
Resource Type: Conference proceeding

Geometry dependence of gate oxide breakdown evolution

Abstract

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