Abstract
The growth temperature and properties of Ge4Sb3Te3 thin films are presented in this paper. The critical growth temperature of Ge4Sb3Te3 is between 300 and 340 degrees C. The Ge4Sb3Te3 films can only be grown on a substrate below the critical growth temperature, The typical resistivity and carrier density are in the order of 10(-4) Omega cm and 10(21) cm(-3) for crystalline phase, It has a rock salt crystal structure with a lattice constant of 0.602 nm. Ge4Sb3Te3 has a better thermal stability but a lower crystallization speed than Ge2Sb2Te5.