HF wet etching of oxide after ion implantation

L J Liu; K L Pey; P Foo; IEEE

doi:10.1109/HKEDM.1996.566296

Back

Conference proceeding

HF wet etching of oxide after ion implantation

L J Liu, K L Pey, P Foo and IEEE

1996 IEEE Hong Kong Electron Devices Meeting : proceedings, 29 June 1996, the Hong Kong Polytechnic University, pp.17-20

01/01/1996

DOI: https://doi.org/10.1109/HKEDM.1996.566296

Abstract

Engineering

Engineering, Electrical & Electronic

Instruments & Instrumentation

Science & Technology

Technology

Experimental study of wet etching of oxide in diluted HF solution is presented for different ion implantation dosage and energy. This wet etching is used as a mean of wafer cleaning at various steps of VLSI processing. It is shown that the etching rate of oxide is a strong function of ion implantation dosage and energy. The oxide wet etch rate can be restored to non-implanted oxide etch rate after 30min anneal at 700 degrees C. The increase of etch rate after ion implantation is attributed to the breakage of Si-O bonds.

Metrics

1 Record Views

Details

Title: HF wet etching of oxide after ion implantation
Creators - without role: L J Liu - Institute of Microelectronics
K L Pey - Institute of Microelectronics
P Foo - Institute of Microelectronics
IEEE
Publication Details: 1996 IEEE Hong Kong Electron Devices Meeting : proceedings, 29 June 1996, the Hong Kong Polytechnic University, pp.17-20
Publisher: IEEE
Number of pages: 4
Identifiers: 9914321109846
Academic Unit: Engineering Product Development (EPD); Temasek Lab
Language: English
Resource Type: Conference proceeding

HF wet etching of oxide after ion implantation

Abstract

Metrics

Details

Singapore University of Technology and Design Social media