High Birefringence in CMOS-compatible ultra-silicon rich nitride vertical slot waveguides

Abhijit K. Gupta; George F. R. Chen; Hongwei Gao; Doris K. T. Ng; Dawn T. H. Tan; IEEE

doi:10.1109/IPC48725.2021.9593027

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High Birefringence in CMOS-compatible ultra-silicon rich nitride vertical slot waveguides

Abhijit K. Gupta, George F. R. Chen, Hongwei Gao, Doris K. T. Ng, Dawn T. H. Tan and IEEE

IEEE Photonics Conference (Online), pp.1-2

10/2021

DOI: https://doi.org/10.1109/IPC48725.2021.9593027

Abstract

Amplitude modulation

Bandwidth

C-band

Communications technology

Conferences

Indexes

Performance evaluation

We demonstrate slot waveguides on ultra-silicon-rich nitride designed for optimal high group index birefringence ( > 1) . High speed characterization using 30Gb/s non-return-to-zero and 56Gb/s pulsed amplitude modulation 4 data are performed on fabricated waveguides showing error-free performance.

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Title: High Birefringence in CMOS-compatible ultra-silicon rich nitride vertical slot waveguides
Creators - without role: Abhijit K. Gupta - Singapore University of Technology and Design
George F. R. Chen - Singapore University of Technology and Design
Hongwei Gao - Singapore University of Technology and Design
Doris K. T. Ng - Institute of Microelectronics
Dawn T. H. Tan - Singapore University of Technology and Design
IEEE
Publication Details: IEEE Photonics Conference (Online), pp.1-2
Publisher: IEEE
Number of pages: 2
Identifiers: 9911314909846
Academic Unit: EPD Pillar
Language: English
Resource Type: Conference proceeding

High Birefringence in CMOS-compatible ultra-silicon rich nitride vertical slot waveguides

Abstract

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