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High frequency drain current noise modeling in MOSFETs under sub-threshold condition
Conference proceeding

High frequency drain current noise modeling in MOSFETs under sub-threshold condition

L.H.K. Chan, K.S. Yeo, K.W.J. Chew, S.N. Ong, X.S. Loo, C.C. Boon and M.A. Do
Proceedings of the 2009 12th International Symposium on Integrated Circuits, pp.310-313
12/2009

Abstract

Annealing De-embedding Frequency Gallium arsenide High frequency noise III-V semiconductor materials Materials science and technology MOSFET MOSFETs Noise modeling Optical pulses Pulsed laser deposition RF MOS transistor noise RFCMOS noise Semiconductor diodes Semiconductor lasers Sub-threshold noise Weak inversion noise
A new high frequency drain current noise model was developed for MOSFETs under sub-threshold condition. A simple parameter extraction technique is proposed, which utilizes Y-parameter analysis on the RF small-signal equivalent circuit. Good agreement has been obtained between the predicted and measured results up to 20 GHz.

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