Abstract
Conference Title: 2014 IEEE 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Conference Start Date: 2014, June 30 Conference End Date: 2014, July 4 Conference Location: Marina Bay Sands, Singapore In this paper we review a dynamic device model for filamentary RRAM in HfO-based dielectrics. We summarize its transient modeling features and its statistical properties. The model explains with satisfactory quantitative resolution all main features of the RRAM switching, not just the voltage, time and temperature dependence, but also statistical fluctuations resulting from atomistic motion and their resulting LRS and HRS-distributions. [PUBLICATION ABSTRACT]