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Impact of 0.25 /spl mu/m dual gate oxide CMOS process on the flicker noise characteristics of multi-fingered MOSFETs for wireless applications
Conference proceeding

Impact of 0.25 /spl mu/m dual gate oxide CMOS process on the flicker noise characteristics of multi-fingered MOSFETs for wireless applications

K.W. Chew, K.S. Yeo, Shao-Fu Chu and Y.M. Wang
2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517), pp.220-223
2001
DOI: https://doi.org/10.1109/VTSA.2001.934524

Abstract

1f noise Circuit noise CMOS process CMOS technology Fluctuations Frequency Low-frequency noise MOSFETs Semiconductor device noise System-on-a-chip
The low frequency noise performance of 0.25 /spl mu/m thin-gate CMOS transistors from the dual gate oxide process and the standard single gate oxide process are evaluated and compared. The results reveal that thin-gate transistors from the dual gate oxide process show an order reduction in the current noise spectra. In general, the low frequency noise behaviour of the fabricated deep-submicrometer MOSFETs is best described by the number fluctuations with correlated mobility fluctuations model.

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