Abstract
Most of the past work on dopant profiling using scanning capacitance microscopy (SCM) deals mainly with either p+/p or n+/n samples. The presence of a pn junction poses an additional consideration to the use of SCM in the quantitative interpretation of dopant profiles. In this paper, the SCM technique was used to measure the 2D boron dopant profile from cross sections of a high-energy boron-implanted pn junction and a laser annealed ultra- shallow p+-n junction.