Abstract
Al/Ta2O5/Pt RRAM cell was successfully demonstrated with stable bipolar switching. Band alignment for the structure of Al/Ta2O5/Pt was obtained using high-resolution X-ray photoelectron spectroscopy to investigate resistance switching behavior. Hole barrier heights of Ta2O5 on metals Pt and Al were extracted using core level and valence band spectra. The energy band alignments of Pt/TaOx and Al/TaOx were thus determined and correlated to conduction mechanisms governing SET and RESET processes of actual bipolar Pt/TaOx/Al devices.