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Investigation of interconnect effects in a transimpedance amplifier
Conference proceeding

Investigation of interconnect effects in a transimpedance amplifier

Xiaomeng Shi, Zhenghao Lu, Jianguo Ma, Erping Li, Kiat Seng Yeo and Manh Anh Do
2006 17th International Zurich Symposium on Electromagnetic Compatibility : February 27, 2006-March 3, 2006, pp.586-589
2006
DOI: https://doi.org/10.1109/EMCZUR.2006.215002

Abstract

Circuit simulation Electronic design automation and methodology Equivalent circuits Foundries Frequency Integrated circuit interconnections Integrated circuit modeling RLC circuits Semiconductor device modeling Skin effect
A novel interconnect model is used in the post layout simulation of a transimpedance amplifier working at 10 GB/s data rate. The unnegligible high frequency interconnect effects such as the inductive effect, skin effect, distributed effect, substrate losses, etc. have been considered in the model. Simulation result employing the proposed model is compared with that using conventional foundry provided RC interconnect model. Apparent discrepancy has been observed and the reason is analyzed

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