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Investigations on non volatile and non rotational phase change random access memory
Conference proceeding

Investigations on non volatile and non rotational phase change random access memory

L P Shi, T C Chong, R Zhao, J M Li, P K Tan, X S Miao, W J Wang, H K Lee, X Q Wei, H X Yang, …
2005 International Non-Volatile Memory Technology Symposium, pp.115-120
01/01/2005

Abstract

Computer Science Computer Science, Hardware & Architecture Science & Technology Technology
In this work, Phase Change Random Access Memory (PCRAM) was studied theoretically and experimentally. Phase change materials were deposited and their physical parameters were measured. A simulation and design software for PCRAM was developed based on multidisciplinary theories including electrodynamics, thermal conduction, crystallization kinetics and numerical computations. By introducing physical models of PCRAM elements, a general macromodel of the phase change random access memory (PCRAM) elements for HSPICE-based computer simulator is proposed. PCRAM array were designed, fabricated, and tested by using a self built tester. Also, near field optical scan microscope incorporated with fs laser was used to fabricate nano scale PCRAM cells.

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