Abstract
Random telegraph noise (RTN) is an important intrinsic phenomenon of any logic or memory device that is indicative of the reliability and stochastic variability in its performance. In the context of the resistive random access memory (RRAM), RTN becomes a key criterion that determines the read disturb immunity and memory window between the low (LRS) and high resistance states (HRS). With the drive towards ultra-low power memory (low reset current) and aggressive scaling to 10 × 10 nm 2 area, contribution of RTN is significantly enhanced by every trap (vacancy) in the dielectric. The underlying mechanisms governing RTN in RRAM are yet to be fully understood. In this study, we aim to decode the role of conductance fluctuations caused by oxygen vacancy transport and inelastic electron trapping and detrapping processes. The influence of resistance state (LRS, shallow and deep HRS), reset depth and reset stop voltage (VRESET-STOP) on the conductance variability is also investigated.