Abstract
A novel structure ofGaAs/GaAIAs multi-quantum well (MQW) traveling wave (TW) Mach-Zehnder modulator (MZM) with coplanar strips is proposed. This device uses n
heavy doped layer to obtain velocity match. Then the Method of Lines is applied to characterize the influence ofmetallization thickness and conductivity loss on the velocity match and impedance match. With optimum parameters ofthe structure, the bandwidth over 80GHz is obtained.